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HGT1S10N120BNS
Insulated Gate BIP Transistor

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Manufacturer Part No: HGT1S10N120BNS

Manufacturer: HARRIS SEMICONDUCTOR

Category: Insulated Gate BIP Transistor

Description: 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB

Package Description:

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HARRIS SEMICONDUCTOR HGT1S10N120BNS technical specifications and attributes

  • PACKAGING

    Tube

  • MOUNTING TYPE

    Surface Mount

  • OPERATING TEMPERATURE

    -55°C ~ 150°C (TJ)

  • PACKAGE CASE

    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

  • SUPPLIER DEVICE PACKAGE

    TO-263 (D2PAK)

  • CATEGORY

    Single IGBTs

  • SERIES