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Manufacturer Part No: HGT1S10N120BNS
Manufacturer: HARRIS SEMICONDUCTOR
Category: Insulated Gate BIP Transistor
Description: 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Package Description:
HARRIS SEMICONDUCTOR HGT1S10N120BNS technical specifications and attributes
PACKAGING
Tube
MOUNTING TYPE
Surface Mount
OPERATING TEMPERATURE
-55°C ~ 150°C (TJ)
PACKAGE CASE
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SUPPLIER DEVICE PACKAGE
TO-263 (D2PAK)
CATEGORY
Single IGBTs
SERIES