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Manufacturer Part No: HGT1S12N60B3D
Manufacturer: HARRIS SEMICONDUCTOR
Category: Insulated Gate BIP Transistor
Description: 27 A, 600 V, N-CHANNEL IGBT, TO-262AA
Package Description: PLASTIC PACKAGE-3
HARRIS SEMICONDUCTOR HGT1S12N60B3D technical specifications and attributes
MOUNTING TYPE
Through Hole
PACKAGE CASE
TO-262-3 Long Leads, I2PAK, TO-262AA
SUPPLIER DEVICE PACKAGE
I2PAK (TO-262)
SERIES
PACKAGING
Bulk
OPERATING TEMPERATURE
-55°C ~ 150°C (TJ)
CATEGORY
Single IGBTs