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Manufacturer Part No: HGT1S12N60B3DS
Manufacturer: HARRIS SEMICONDUCTOR
Category: Insulated Gate BIP Transistor
Description: 27 A, 600 V, N-CHANNEL IGBT, TO-263AB
Package Description: PLASTIC PACKAGE-4
HARRIS SEMICONDUCTOR HGT1S12N60B3DS technical specifications and attributes
CATEGORY
Single IGBTs
SERIES
OPERATING TEMPERATURE
-55°C ~ 150°C (TJ)
MOUNTING TYPE
Surface Mount
SUPPLIER DEVICE PACKAGE
TO-263AB
PACKAGING
Bulk
PACKAGE CASE
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB