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Manufacturer Part No: HGT1S12N60C3
Manufacturer: HARRIS SEMICONDUCTOR
Category: Insulated Gate BIP Transistor
Description: 24 A, 600 V, N-CHANNEL IGBT, TO-262AA
Package Description:
HARRIS SEMICONDUCTOR HGT1S12N60C3 technical specifications and attributes
SERIES
MOUNTING TYPE
Through Hole
PACKAGING
Bulk
OPERATING TEMPERATURE
-40°C ~ 150°C (TJ)
PACKAGE CASE
TO-262-3 Long Leads, I2PAK, TO-262AA
SUPPLIER DEVICE PACKAGE
TO-262 (I2PAK)
CATEGORY
Single IGBTs