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Manufacturer Part No: HGT1S12N60C3DS
Manufacturer: HARRIS SEMICONDUCTOR
Category: Insulated Gate BIP Transistor
Description: 24 A, 600 V, N-CHANNEL IGBT, TO-263AB
Package Description: TO-263AB, 3 PIN
HARRIS SEMICONDUCTOR HGT1S12N60C3DS technical specifications and attributes
MOUNTING TYPE
Surface Mount
ROHS STATUS
RoHS non-compliant
SERIES
PACKAGING
Bulk
SUPPLIER DEVICE PACKAGE
TO-263AB
ECCN
EAR99
OPERATING TEMPERATURE
-40°C ~ 150°C (TJ)
PACKAGE CASE
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PART STATUS
Active
MOISTURE SENSITIVITY LEVEL MSL
1 (Unlimited)
CATEGORY
Single IGBTs
HTSUS
8541.29.0095