MG25Q6ES11
TOSHIBA AMERICA ELECTRONIC COMPONENTS INC
Insulated Gate BIP Transistor
25 A, 1200 V, N-CHANNEL IGBT
MG400Q1US51
520 A, 1200 V, N-CHANNEL IGBT
2-109F1A, 4 PIN
MG150J2YS21
150 A, 600 V, N-CHANNEL IGBT
MG100G2YS1
100 A, 500 V, N-CHANNEL IGBT
MG75N1AS1
75 A, 1000 V, N-CHANNEL IGBT
2-33D1A, 3 PIN
MIG10Q806H
15 A, 1200 V, N-CHANNEL IGBT
MIG15Q906H
GT50G321
50 A, 400 V, N-CHANNEL IGBT
LEAD FREE, 2-21F2C, 3 PIN
MG400J1US51
400 A, 600 V, N-CHANNEL IGBT
MG150J1BS11
MG75Q1JS40
75 A, 1200 V, N-CHANNEL IGBT
MG200J2YS50
200 A, 600 V, N-CHANNEL IGBT
MG150J2YS2
MG300J2YS21
300 A, 600 V, N-CHANNEL IGBT
MG25J2YS91
25 A, 600 V, N-CHANNEL IGBT
GT25G101
25 A, 400 V, N-CHANNEL IGBT
GT8G133
IGBT
LEAD FREE, 2-3R1G, TSSOP-8
GT8Q101
8 A, 1200 V, N-CHANNEL IGBT, TO-3PN
TO-3PN, 3 PIN
GT20D101
20 A, 250 V, N-CHANNEL IGBT, TO-3P
TO-3P, 3 PIN
MG200N1US41
200 A, 1000 V, N-CHANNEL IGBT
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